AOW25S65/aowf25s65 650v 25a a aa a mos tm power transistor general description product summary v ds @ t j,max 750v i dm 104a r ds(on),max 0.19 w q g,typ 26.4nc e oss @ 400v 5.8 m c 100% uis tested 100% r g tested symbol v ds v gs i dm i ar e ar e as mosfet dv/dt ruggedness peak diode recovery dv/dt h t j , t stg t l symbol r q ja r q cs r q jc * drain current limited by maximum junction tempera ture. repetitive avalanche energy c 28 357 750 mj mj 96 p d single pulsed avalanche energy g w t c =25c dv/dt 2.9 20 derate above 25 o c a 7 a avalanche current c 16* 16 104 t c =100c pulsed drain current c continuous drain current gate-source voltage v i d 25* 25 t c =25c 30 the AOW25S65 & aowf25s65 have been fabricated using the advanced a mos tm high voltage process that is designed to deliver high levels of performance and robustness in switching applications. by providing low r ds(on) , q g and e oss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. v units parameter absolute maximum ratings t a =25c unless otherwise noted AOW25S65 aowf25s65 drain-source voltage 650 parameter AOW25S65 0.22 junction and storage temperature range -55 to 150 aowf25s65 100 power dissipation b c/w w/ o c c thermal characteristics 0.5 -- c/w maximum junction-to-case 0.35 4.5 units v/ns maximum case-to-sink a maximum junction-to-ambient a,d 300 65 65 maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds j c c/w g ds top view to-262f bottom view top view to-262 bottom view g d s g d s g d s g d s AOW25S65 aowf25s65 rev0: dec 2011 www.aosmd.com page 1 of 6
AOW25S65/aowf25s65 symbol min typ max units 650 - - 700 750 - - - 1 - 10 - i gss gate-body leakage current - - 100 n a v gs(th) gate threshold voltage 2.6 3.3 4 v - 0.165 0.19 w - 0.47 0.53 w v sd - 0.84 - v i s maximum body-diode continuous current - - 25 a i sm - - 104 a c iss - 1278 - pf c oss - 87 - pf c o(er) - 64.5 - pf c o(tr) - 236.7 - pf c rss - 1.4 - pf r g - 4.9 - w q g - 26.4 - nc q gs - 6.2 - nc q gd - 9.5 - nc t d(on) - 29 - ns t r - 30 - ns t d(off) - 112 - ns t f - 34 - ns t rr - 408 - ns i rm - 33 - a q rr - 8.27 - m c this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =12.5a,di/dt=100a/ m s,v ds =400v i f =12.5a,di/dt=100a/ m s,v ds =400v v gs =10v, v ds =400v, i d =12.5a, r g =25 w total gate charge v gs =10v, v ds =480v, i d =12.5a gate source charge gate drain charge body diode reverse recovery charge i f =12.5a,di/dt=100a/ m s,v ds =400v maximum body-diode pulsed current c turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime body diode reverse recovery time peak reverse recovery current turn-off fall time r ds(on) static drain-source on-resistance i s =7.5a,v gs =0v, t j =25c diode forward voltage v gs =10v, i d =12.5a, t j =25c v gs =10v, i d =12.5a, t j =150c reverse transfer capacitance effective output capacitance, time related i switching parameters input capacitance v gs =0v, v ds =100v, f=1mhz output capacitance v gs =0v, v ds =100v, f=1mhz gate resistance v gs =0v, v ds =0v, f=1mhz effective output capacitance, energy related h zero gate voltage drain current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i d =250 a, v gs =0v, t j =150c i dss m a v ds =650v, v gs =0v v bv dss drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c v gs =0v, v ds =0 to 480v, f=1mhz v ds =5v,i d =250 m a v ds =520v, t j =150c v ds =0v, v gs =30v a. the value of r q ja is measured with the device in a still air environ ment with t a =25c. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is use d. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150c, ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r q ja is the sum of the thermal impedance from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse ratin g. g. l=60mh, i as =5a, v dd =150v, starting t j =25c h. c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v (br)dss. i. c o(tr) is a fixed capacitance that gives the same chargin g time as c oss while v ds is rising from 0 to 80% v (br)dss. j. wavesoldering only allowed at leads. rev0: dec 2011 www.aosmd.com page 2 of 6
AOW25S65/aowf25s65 typical electrical and thermal characteristics 0 10 20 30 40 50 0 5 10 15 20 v ds (volts) figure 1: on-region characteristics@25c i d (a) v gs =4.5v 6v 10v 7v 0.01 0.1 1 10 100 1000 2 4 6 8 10 v gs (volts) figure 3: transfer characteristics i d (a) -55c v ds =20v 25c 125c 0.0 0.1 0.2 0.3 0.4 0.5 0 10 20 30 40 50 60 i d (a) figure 4: on-resistance vs. drain current and gate voltage r ds(on) ( w ww w ) v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 temperature (c) figure 5: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =12.5a 0.7 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 t j ( o c) figure 6: break down vs. junction temperature bv dss (normalized) 0 5 10 15 20 25 30 35 0 5 10 15 20 v ds (volts) figure 2: on-region characteristics@125c i d (a) v gs =4.5v 5v 10v 6v 5v 5.5v 5.5v 7v rev0: dec 2011 www.aosmd.com page 3 of 6
AOW25S65/aowf25s65 typical electrical and thermal characteristics 0 3 6 9 12 15 0 8 16 24 32 40 q g (nc) figure 8: gate-charge characteristics v gs (volts) v ds =480v i d =12.5a 1 10 100 1000 10000 0 100 200 300 400 500 600 v ds (volts) figure 9: capacitance characteristics capacitance (pf) c iss c oss c rss 0.01 0.1 1 10 100 1000 1 10 100 1000 v ds (volts) i d (amps) figure 11: maximum forward biased safe operating area for AOW25S65 (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150c t c =25c 100 m s 0.01 0.1 1 10 100 1000 1 10 100 1000 v ds (volts) i d (amps) figure 12: maximum forward biased safe operating area for aowf25s65(note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150c t c =25c 100 m s 1s 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 7: body-diode characteristics (note e) i s (a) 25c 125c 0 2 4 6 8 10 12 0 100 200 300 400 500 600 v ds (volts) figure 10: coss stored energy eoss(uj) e oss rev0: dec 2011 www.aosmd.com page 4 of 6
AOW25S65/aowf25s65 typical electrical and thermal characteristics 0 5 10 15 20 25 30 0 25 50 75 100 125 150 t case (c) figure 14: current de-rating (note b) current rating i d (a) 0 150 300 450 600 750 900 25 50 75 100 125 150 175 t case (c) figure 13: avalanche energy e as (mj) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 15: normalized maximum transient thermal imp edance for AOW25S65 (note f) z q qq q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.35c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 16: normalized maximum transient thermal imp edance for aowf25s65 (note f) z q qq q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =4.5c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d t on t p d rev0: dec 2011 www.aosmd.com page 5 of 6
AOW25S65/aowf25s65 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar rev0: dec 2011 www.aosmd.com page 6 of 6
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